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NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
V (BR)DSS
http://onsemi.com
R DS(ON) MAX
I D MAX
?
Qualified and PPAP Capable
These are Pb ? Free Devices
30 V
8.0 m W @ 10 V
12.4 m W @ 4.5 V
63 A
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
G
D
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
S
N ? CHANNEL MOSFET
4
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 85 ° C
I D
13.8
10.7
A
4
3
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
ID
P D
2.63
10
7.8
1.4
W
A
W
1 2
3
DPAK
CASE 369AA
STYLE 2
1
2
IPAK
CASE 369D
STYLE 2
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
63
49
54.6
A
W
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4 Drain
Drain
Pulsed Drain
Current
t p =10 m s
T A = 25 ° C
I DM
126
A
Current Limited by Package
T A = 25 ° C
I DmaxPkg
45
A
1
2
3
Operating Junction and Storage T J , ? 55 to ° C
Temperature T STG +175
Source Current (Body Diode) I S 45 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain ? to ? Source Avalanche EAS 144.5 mJ
Energy (V DD = 24 V, V GS = 10 V,
I L = 17 A pk , L = 1.0 mH, R G = 25 W)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate Source
Gate Drain Source
Y = Year
WW = Work Week
4808N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 7
1
Publication Order Number:
NTD4808N/D
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相关代理商/技术参数
NTD4808N-35G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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NTD4809N-35G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4809N-35H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
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